公开(公告)号：US20250149518A1

公开(公告)日：2025-05-08

申请号：US18744994

申请日：2024-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yejin LEE ,  Dahee KIM ,  Jaeseong KIM ,  Jeongseok KIM ,  Taewook KIM ,  Gyujin CHOI ,  Jooyoung CHOI ,  Sangseok HONG

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/13 ,  H01L23/31 ,  H01L23/498

Abstract: Provided is a semiconductor package including a first redistribution layer, a semiconductor device on the first redistribution layer, a substrate protection layer below the first redistribution layer, a groove in a bottom surface of the substrate protection layer, a passive device in the groove, an underfill between the passive device and the groove, and a dam apart from the passive device, the dam protruding from the substrate protection layer and at least partially surrounding the passive device.