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公开(公告)号：US12193235B2
公开(公告)日：2025-01-07
申请号：US17537984
申请日：2021-11-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngtek Oh , Hyeyoung Kwon , Taein Kim , Gukhyon Yon , Minhyun Lee
IPC: H10B43/27
Abstract: A nonvolatile memory device includes a channel layer, a plurality of gate electrodes and a plurality of separation layers spaced apart from the channel layer and alternately arranged, a charge trap layer between the gate electrodes in the channel layer, and a charge blocking layer between the charge trap layer and the gate electrode.
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