公开(公告)号：US10276373B2

公开(公告)日：2019-04-30

申请号：US15490976

申请日：2017-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Chul Jeong ,  Tae Kyu Lee ,  Sung Sik Park ,  Joon Soo Park ,  Kwang Sub Yoon ,  Boo Hyun Ham

IPC: H01L21/027 ,  G03F7/09 ,  G03F7/075 ,  G03F7/42 ,  H01L21/311 ,  H01L21/266 ,  H01L21/768 ,  H01L21/8234

Abstract: A method for manufacturing a semiconductor device includes forming an etch target layer on a semiconductor substrate, forming a first photoresist pattern disposed on the etch target layer, irradiating ultraviolet (UV) light in an oxygen-containing atmosphere to remove the first photoresist pattern from the etch target layer, and forming a second photoresist pattern on the etch target layer.