公开(公告)号：US11512857B2

公开(公告)日：2022-11-29

申请号：US17216875

申请日：2021-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungwoo Han ,  Sungmin Oh ,  Jaehee Jo ,  Sangjin Kim ,  Junesang Mok ,  Changhyun Son ,  Minho Yun ,  Bokhyun Jang

IPC: F24C15/32 ,  F24C15/00 ,  F24C15/08 ,  F24C15/20 ,  F24C15/06 ,  A47J37/06 ,  F24C3/12 ,  F24C5/16 ,  F24C7/08

Abstract: A cooking appliance includes a main body forming a machine room; a cooking chamber arranged below the machine room; an intermediate flow path including a first suction port and formed between the machine room and the cooking chamber; and a fan configured to suction air into the intermediate flow path, wherein the machine room includes a second suction port through which air is suctioned, and an opening portion connected to the intermediate flow path, the opening portion includes a first opening portion and a second opening portion arranged at a farther distance from the fan than the first opening portion, and the second opening portion has an area larger than an area of the first opening portion.

公开(公告)号：US11732899B2

公开(公告)日：2023-08-22

申请号：US16587856

申请日：2019-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmin Oh ,  Changhyun Son ,  Jaehee Jo

IPC: F24C7/08 ,  F23N5/24 ,  H05B1/02 ,  G05D23/19 ,  F24C7/04

CPC classification number: F24C7/082 ,  F23N5/242 ,  F24C7/046 ,  F24C7/087 ,  G05D23/1917 ,  H05B1/0263

Abstract: A cooking apparatus is provided. The cooking apparatus includes a first manipulation part, a second manipulation part, an electric heating element for heating an object to be cooked, a switch connected with a relay that is turned on/turned off, and which is for providing power provided through the relay in a turned-on state to the electric heating element according to a user manipulation input through the first manipulation part, and a processor which, based on receiving input of a user manipulation of the second manipulation part, turns on the relay for a predetermined time period.

公开(公告)号：US12000596B2

公开(公告)日：2024-06-04

申请号：US17988320

申请日：2022-11-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungwoo Han ,  Sungmin Oh ,  Jaehee Jo ,  Sangjin Kim ,  Junesang Mok ,  Changhyun Son ,  Minho Yun ,  Bokhyun Jang

IPC: F24C15/32 ,  F24C15/00 ,  A47J37/06 ,  F24C3/12 ,  F24C5/16 ,  F24C7/08 ,  F24C15/06 ,  F24C15/08 ,  F24C15/20

CPC classification number: F24C15/322 ,  F24C15/006 ,  A47J37/0641 ,  F24C3/126 ,  F24C5/16 ,  F24C7/085 ,  F24C15/005 ,  F24C15/06 ,  F24C15/08 ,  F24C15/2007 ,  F24C15/32 ,  F24C15/325

Abstract: A cooking appliance includes a main body forming a machine room; a cooking chamber arranged below the machine room; an intermediate flow path including a first suction port and formed between the machine room and the cooking chamber; and a fan configured to suction air into the intermediate flow path, wherein the machine room includes a second suction port through which air is suctioned, and an opening portion connected to the intermediate flow path, the opening portion includes a first opening portion and a second opening portion arranged at a farther distance from the fan than the first opening portion, and the second opening portion has an area larger than an area of the first opening portion.

公开(公告)号：US20180226303A1

公开(公告)日：2018-08-09

申请号：US15856444

申请日：2017-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYOSIG WON ,  Sang-Kyu Oh ,  Sungmin Oh ,  Kwangok Jeong

IPC: H01L21/66 ,  H01L21/8238 ,  G01N23/2251 ,  G01R31/26

CPC classification number: H01L22/10 ,  G01N23/2251 ,  G01R31/2644 ,  G01R31/2856 ,  G01R31/307 ,  H01L21/8238 ,  H01L22/12 ,  H01L22/30 ,  H01L27/1104

Abstract: A method of manufacturing a semiconductor device includes forming transistors in a cell region of a test wafer, forming a first test pattern on a first test cell in the cell region, the first test pattern being electrically connected to the transistors, and scanning the first test pattern using an electron beam. Forming the transistors in the cell region includes patterning an upper portion of the test wafer to form active patterns, forming source/drain regions on the active patterns, forming gate electrodes extending across the active patterns, forming active contacts coupled to the source/drain regions, and forming gate contacts coupled to the gate electrodes.