公开(公告)号：US20190312124A1

公开(公告)日：2019-10-10

申请号：US16249298

申请日：2019-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun Il LEE ,  Sung II PARK ,  Jae Hyun PARK ,  Hyung Suk LEE

IPC: H01L29/66 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/02 ,  H01L21/8238

Abstract: A semiconductor device including a first fin type pattern and a second fin type pattern which protrude from a substrate and are spaced apart from each other to extend in a first direction, a dummy fin type pattern protruding from the substrate between the first fin type pattern and the second fin type pattern, a first gate structure extending in a second direction intersecting with the first direction, on the first fin type pattern, a second gate structure extending in the second direction, on the second fin type pattern, and a capping pattern extending in the second direction, on the first gate structure and the second gate structure, wherein the capping pattern includes a separation part which is in contact with an upper surface of the dummy fin type pattern, and the dummy fin type pattern and the separation part separate the first gate structure and the second gate structure.