公开(公告)号：US20250133842A1

公开(公告)日：2025-04-24

申请号：US18754976

申请日：2024-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook LIM ,  Sung Hyuck CHO

IPC: H01L27/146

Abstract: An image sensor includes a pixel array including a plurality of unit pixels and a driving circuitry provided around the pixel array and driving the plurality of unit pixels. Each of the plurality of unit pixels includes a first region ad a second region. The first region includes a first photodiode, a first transfer transistor connected to the first photodiode, a first floating diffusion node connected to the first transfer transistor, and a (1-1)-th contact connected to a second floating diffusion node, and the second region includes a second photodiode, a second transfer transistor connected to the second photodiode, a (1-2)-th contact electrically connected to the (1-1)-th contact through connection metal wiring, and a second contact provided to a third floating diffusion node connected to the second transfer transistor.

公开(公告)号：US20230395621A1

公开(公告)日：2023-12-07

申请号：US18119685

申请日：2023-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook LIM ,  Seo Joo KIM ,  So Eun PARK ,  Sung Hyuck CHO

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14643 ,  H01L27/14603

Abstract: An image sensor including a plurality of pixels, wherein each pixel of the plurality of pixels comprises: a first sub-pixel comprising a first photoelectric conversion area, a first floating diffusion area, and a first transfer transistor configured to transfer charges accumulated in the first photoelectric conversion area to the first floating diffusion area; and a second sub-pixel disposed adjacent to the first sub-pixel and comprising a second photoelectric conversion area, a second floating diffusion area and a second transfer transistor configured to transfer charges accumulated in the second photoelectric conversion area to the second floating diffusion area, wherein the first transfer transistor comprises a first transfer gate, wherein the second transfer transistor comprises a second transfer gate, and wherein the second transfer gate comprises a vertical multi-gate

公开(公告)号：US20240178252A1

公开(公告)日：2024-05-30

申请号：US18332270

申请日：2023-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seo Joo KIM ,  Sung Hyuck CHO ,  Young Chan KIM ,  Seung Hyun LEE ,  Young Gu JIN

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14603 ,  H01L27/14621

Abstract: In one embodiment, an image sensor includes unit pixels, each of the unit pixel including a first sub-pixel and a second sub-pixel adjacent to the first sub-pixel in a plan view of the image sensor; and a lens array including a first sub-lens area on the first sub-pixel of each unit pixel and a second sub-lens area on the second sub-pixel of each unit pixel. The first sub-lens area may include a first micro lens, and the second sub-lens area includes a second micro lens. In addition, the first micro lens may include a depression defined in a central area thereof.