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公开(公告)号:US20230395621A1
公开(公告)日:2023-12-07
申请号:US18119685
申请日:2023-03-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jung Wook LIM , Seo Joo KIM , So Eun PARK , Sung Hyuck CHO
IPC: H01L27/146
CPC classification number: H01L27/14612 , H01L27/14643 , H01L27/14603
Abstract: An image sensor including a plurality of pixels, wherein each pixel of the plurality of pixels comprises: a first sub-pixel comprising a first photoelectric conversion area, a first floating diffusion area, and a first transfer transistor configured to transfer charges accumulated in the first photoelectric conversion area to the first floating diffusion area; and a second sub-pixel disposed adjacent to the first sub-pixel and comprising a second photoelectric conversion area, a second floating diffusion area and a second transfer transistor configured to transfer charges accumulated in the second photoelectric conversion area to the second floating diffusion area, wherein the first transfer transistor comprises a first transfer gate, wherein the second transfer transistor comprises a second transfer gate, and wherein the second transfer gate comprises a vertical multi-gate
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公开(公告)号:US20240178252A1
公开(公告)日:2024-05-30
申请号:US18332270
申请日:2023-06-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seo Joo KIM , Sung Hyuck CHO , Young Chan KIM , Seung Hyun LEE , Young Gu JIN
IPC: H01L27/146
CPC classification number: H01L27/14627 , H01L27/14603 , H01L27/14621
Abstract: In one embodiment, an image sensor includes unit pixels, each of the unit pixel including a first sub-pixel and a second sub-pixel adjacent to the first sub-pixel in a plan view of the image sensor; and a lens array including a first sub-lens area on the first sub-pixel of each unit pixel and a second sub-lens area on the second sub-pixel of each unit pixel. The first sub-lens area may include a first micro lens, and the second sub-lens area includes a second micro lens. In addition, the first micro lens may include a depression defined in a central area thereof.
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