公开(公告)号：US20190319717A1

公开(公告)日：2019-10-17

申请号：US16356088

申请日：2019-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dooseok CHOI ,  Dae-young YOON ,  Sun-woo LEE ,  Thomas Byunghak CHO ,  Seung-chan HEO

IPC: H04B17/00 ,  H03F3/24 ,  G01R29/08 ,  H04B1/44

Abstract: A method of testing a radio frequency (RF) integrated circuit includes: forming, performed by the RF integrated circuit, a test loop that passes through a first transceiver circuit, a first front-end circuit, and a second transceiver circuit, based on a test control signal transmitted from a test device; adjusting, performed by the RF integrated circuit, a shift degree of at least one phase shifter in the first front-end circuit, based on the test control circuit; and receiving, performed by the RF integrated circuit, a test input signal via the first transceiver circuit from the test device, and outputting, to the test device, the test input signal that has passed through the test loop, wherein the test input signal is output as a test output signal via the second transceiver circuit.

公开(公告)号：US20190034270A1

公开(公告)日：2019-01-31

申请号：US15889741

申请日：2018-02-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hui-chung BYUN ,  Seung-hun LEE ,  Sun-woo LEE

IPC: G06F11/10 ,  G11C29/52

Abstract: A memory module including a plurality of memory chips each including DQ contact points which are grouped into at least one DQ group corresponding to a correction data width, a serial presence detect (SPD) chip configured to store DQ grouping information about the plurality of memory chips, and additional DQS contact points connected to the at least one DQ group, the additional DQS contact points configured to transmit signals to perform a data correction algorithm based on the correction data width in an error correction mode may be provided.