公开(公告)号：US20230247834A1

公开(公告)日：2023-08-03

申请号：US17986983

申请日：2022-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyeong AHN ,  Gukhyon YON

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11573

CPC classification number: H01L27/11582 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11573

Abstract: Disclosed are a three-dimensional semiconductor memory device, an electronic system including the same, and a method of fabricating the same. The semiconductor memory device may include a stack structure including electrode layers and electrode interlayer insulating layers, which are alternately stacked on a substrate, vertical semiconductor penetrating the stack structure and placed adjacent to the substrate, and a gate insulating layer between the vertical semiconductor patterns and the stack structure. The gate insulating layer may include a blocking insulating layer adjacent to the stack structure, and charge storing patterns, which are spaced apart from the stack structure with the blocking insulating layer therebetween and are arranged along a surface of the blocking insulating layer. As a distance to the blocking insulating layer decreases, widths of the charge storing patterns may increase.