公开(公告)号：US20200020691A1

公开(公告)日：2020-01-16

申请号：US16229207

申请日：2018-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo-Jung CHOI ,  Dong-Hyun ROH ,  Sung-Soo KIM ,  Gyu-Hwan AHN ,  Sang-Jin HYUN

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L21/308

Abstract: A semiconductor device may include active fins spaced apart from each other by a recess therebetween, each of the active fins protruding from an upper surface of a substrate, an isolation structure including a liner on a lower surface and a sidewall of a lower portion of the recess and a blocking pattern on the liner, the blocking pattern filling a remaining portion of the lower portion of the recess and including a nitride, a carbide or polysilicon, a gate electrode structure on the active fins and the isolation structure, and a source/drain layer on a portion of each of the active fins adjacent to the gate electrode structure.