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    Plasma processing apparatus
    3.
    发明授权
    Plasma processing apparatus 有权

    公开(公告)号：US11244839B2

    公开(公告)日：2022-02-08

    申请号：US16385919

    申请日：2019-04-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Cheonkyu Lee ,  Siqing Lu ,  Takafumi Noguchi

    IPC: H01L21/67 ,  H01L21/683 ,  H01J37/32

    Abstract: A plasma processing apparatus includes a process chamber, a substrate chuck disposed in the process chamber, and a temperature controller. The substrate chuck is configured to receive a substrate, and includes a cooling channel through which a coolant flows. The temperature controller is configured to control a temperature of the coolant supplied to the cooling channel. The temperature controller includes a cooler configured to cool the coolant supplied to the cooling channel, a heater configured to heat the coolant supplied to the cooling channel, and a 3-way valve configured to regulate a first flow rate of the coolant passing through the cooler and a second flow rate of the coolant passing through the heater.

    Substrate processing apparatus
    4.
    发明授权
    Substrate processing apparatus 有权

    公开(公告)号：US11538697B2

    公开(公告)日：2022-12-27

    申请号：US17016881

    申请日：2020-09-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang Ki Nam ,  Jang-Yeob Lee ,  Sungyeol Kim ,  Sunghyup Kim ,  Soonam Park ,  Siqing Lu

    IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3213

    Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.

    ELECTROSTATIC CHUCK AND WAFER ETCHING DEVICE INCLUDING THE SAME
    7.
    发明申请
    ELECTROSTATIC CHUCK AND WAFER ETCHING DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20200066565A1

    公开(公告)日：2020-02-27

    申请号：US16432281

    申请日：2019-06-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Myoung-soo Park ,  Siqing Lu ,  Michio Ishikawa ,  Masashi Kikuchi

    IPC: H01L21/683 ,  H01L21/67

    Abstract: An electrostatic chuck according to an embodiment includes a fixing plate on which a wafer is fixed, an electrostatic plate located under the fixing plate and configured to generate an electrostatic force to fix the wafer on the fixing plate, a plurality of heating elements located under the electrostatic plate and separated to locally control a temperature of the electrostatic plate, and a cooling plate located under the plurality of separated heating elements and configured to emit heat transferred by the plurality of separated heating elements.

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