公开(公告)号：US09379115B2

公开(公告)日：2016-06-28

申请号：US14089075

申请日：2013-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhyun Shin ,  Minchul Kim ,  Seong Soon Cho ,  Seungwook Chol

IPC: H01L27/105 ,  H01L27/06 ,  H01L27/115 ,  H01L49/02

CPC classification number: H01L27/1052 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11531 ,  H01L28/20

Abstract: In a semiconductor device and a method of making the same, the semiconductor device comprises a substrate including a first region and a second region. At least one first gate structure is on the substrate in the first region, the at least one first gate structure including a first gate insulating layer and a first gate electrode layer on the first gate insulating layer. At least one isolating structure is in the substrate in the second region, a top surface of the isolating structure being lower in height than a top surface of the substrate. At least one resistor pattern is on the at least one isolating structure.