公开(公告)号：US20230262980A1

公开(公告)日：2023-08-17

申请号：US17936473

申请日：2022-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjae Sim ,  Byung-Sun Park ,  Jaechul Lee ,  Dae-Hun Choi

IPC: H01L27/11582 ,  H01L23/535 ,  H01L27/11573

CPC classification number: H01L27/11582 ,  H01L23/535 ,  H01L27/11573

Abstract: Disclosed are a three-dimensional semiconductor memory device, a method of fabricating the same, and an electronic system including the same. The semiconductor memory device may include a substrate including a first region and a second region, a plurality of stacks including first and second stacks, each of which includes interlayer insulating layers and gate electrodes stacked alternately with the interlayer insulating layers on the substrate and has a stepped structure on the second region, an insulating layer on stepped structure of the first stack, a plurality of vertical channel structures provided on the first region to penetrate the first stack, and a separation structure separating the first and second stacks from each other. The insulating layer may include one or more dopants, and a dopant concentration of the insulating layer may decrease as a distance from the substrate increases.