-
公开(公告)号:US11581290B2
公开(公告)日:2023-02-14
申请号:US17167538
申请日:2021-02-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seunghyun Baik
IPC: H01L25/065 , H01L23/00 , H01L23/31 , H01L23/528
Abstract: A semiconductor package includes a package substrate including an insulating layer having an upper surface and a lower surface and provided with a first region which is recessed to a first depth from the upper surface toward the lower surface, a redistribution wiring buried in the insulating layer, a chip connection pad on a bottom surface of the recessed first region and connected to the redistribution wiring, and a wire connection pad on the upper surface of the insulating layer and connected to the redistribution wiring, a first semiconductor chip overlapping, in a top-down view of the semiconductor package, the recessed first region of the insulating layer and comprising a first chip pad connected to the chip connection pad of the package substrate, and a second semiconductor chip on the first semiconductor chip and connected to the wire connection pad of the package substrate through a conductive wire.
-
公开(公告)号:US20220013500A1
公开(公告)日:2022-01-13
申请号:US17167538
申请日:2021-02-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seunghyun Baik
IPC: H01L25/065 , H01L23/00 , H01L23/528 , H01L23/31
Abstract: A semiconductor package includes a package substrate including an insulating layer having an upper surface and a lower surface and provided with a first region which is recessed to a first depth from the upper surface toward the lower surface, a redistribution wiring buried in the insulating layer, a chip connection pad on a bottom surface of the recessed first region and connected to the redistribution wiring, and a wire connection pad on the upper surface of the insulating layer and connected to the redistribution wiring, a first semiconductor chip overlapping, in a top-down view of the semiconductor package, the recessed first region of the insulating layer and comprising a first chip pad connected to the chip connection pad of the package substrate, and a second semiconductor chip on the first semiconductor chip and connected to the wire connection pad of the package substrate through a conductive wire.
-
3.
公开(公告)号:US20240355777A1
公开(公告)日:2024-10-24
申请号:US18475530
申请日:2023-09-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seunghyun Baik
IPC: H01L25/065 , H01L23/00 , H01L23/31
CPC classification number: H01L25/0652 , H01L23/3128 , H01L24/16 , H01L24/26 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/16225 , H01L2224/26175 , H01L2224/32225 , H01L2224/48225 , H01L2224/73204 , H01L2225/06562
Abstract: A semiconductor package includes a substrate, a first semiconductor chip on an upper surface of the substrate, and electrically conductive bumps extending between and electrically connected to the substrate and the first semiconductor chip. A non-conductive film layer is provided, which has at least a portion extending between the electrically conductive bumps. A second semiconductor chip is provided, which extends on the upper surface of the substrate. Electrically conductive wires are provided that electrically connect respective portions of the second semiconductor chip to respective portions of the upper surface of the substrate. In addition, the upper surface of the substrate includes a dam, which protrudes between one of: (i) a region overlapping the second semiconductor chip, and (ii) a region connected to the wires and a region overlapping the first semiconductor chip. The upper surface of the substrate may also include a trench recessed alongside at least a portion of the dam.
-
公开(公告)号:US10916533B2
公开(公告)日:2021-02-09
申请号:US16248533
申请日:2019-01-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seunghyun Baik
IPC: H01L25/18 , H01L23/00 , H01L25/065 , H01L23/31 , H01L23/498 , H01L25/00 , H01L23/14 , H01L21/56
Abstract: A semiconductor package includes a substrate, a first chip on the substrate, a second chip on the substrate and arranged side-by-side with the first chip, and a support structure on the second chip. A width of the support structure is equal to or greater than a width of the second chip.
-
公开(公告)号:US11948913B2
公开(公告)日:2024-04-02
申请号:US17519917
申请日:2021-11-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seunghyun Baik
IPC: H01L25/065 , H01L23/00
CPC classification number: H01L25/0652 , H01L24/05 , H01L24/06 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/33 , H01L24/45 , H01L2224/05541 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/0569 , H01L2224/0603 , H01L2224/06051 , H01L2224/06165 , H01L2224/06515 , H01L2224/32013 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48101 , H01L2224/48106 , H01L2224/48132 , H01L2224/48227 , H01L2224/48463 , H01L2224/49111 , H01L2224/49175 , H01L2224/73215 , H01L2224/73265
Abstract: A semiconductor package according to the exemplary embodiments of the disclosure includes a base substrate including a base bonding pad, a first semiconductor chip disposed on the base substrate, a first adhesive layer provided under the first semiconductor chip, a first bonding pad provided in a bonding region on an upper surface of the first semiconductor chip, a first bonding wire interconnecting the base bonding pad and the first bonding pad, and a crack preventer provided in a first region at the upper surface of the first semiconductor chip. The crack preventer includes dummy pads provided at opposite sides of the first region and a dummy wire interconnecting the dummy pads.
-
公开(公告)号:US20240395755A1
公开(公告)日:2024-11-28
申请号:US18437895
申请日:2024-02-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seunghyun Baik
IPC: H01L23/00
Abstract: Some embodiments of the present disclosure provide a semiconductor package including: a package substrate including a main pad and a main wiring pattern; a semiconductor chip on the package substrate; a plurality of connection bumps between the package substrate and the semiconductor chip and including a plurality of connection solder patterns on the main pad and a plurality of connection pillars on the connection solder patterns; a dummy insulating pattern between the package substrate and the semiconductor chip and configured to cover the main wiring pattern; and a plurality of dummy pillars on the dummy insulating pattern, wherein the dummy pillars are in contact with the dummy insulating pattern, and are electrically insulated from the dummy insulating pattern.
-
公开(公告)号:US10136854B2
公开(公告)日:2018-11-27
申请号:US14724220
申请日:2015-05-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seunghyun Baik , Daewoo Suh , Dongmok Lee , Sanghoon Lee
IPC: H01L35/30 , A61B5/00 , H01L35/32 , H01L35/16 , H01L35/18 , H01L35/22 , H01L35/20 , A61B5/11 , H02J7/35 , H01L35/24 , H01L35/26
Abstract: A thermoelectric material includes a stretchable polymer, and a thermoelectric structure and an electrically conductive material that are mixed together with the stretchable polymer. The thermoelectric material may be applied to self-power generating wearable electronic apparatuses.
-
-
-
-
-
-