公开(公告)号：US20240234332A1

公开(公告)日：2024-07-11

申请号：US18489354

申请日：2023-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junseok PARK ,  Seunghak PARK ,  Chan HWANG

IPC: H01L23/544 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L23/544 ,  H10B41/27 ,  H10B43/27 ,  H01L2223/54426

Abstract: A semiconductor device includes a first stack structure in a first region, a first channel structure in contact with the substrate, a second stack structure on the first stack structure, a second channel structure connected to the first channel structure, a third stack structure on the second stack structure, a third channel structure connected to the second channel structure, a first mold structure in a second region, first overlay structures on the first mold structure, a second mold structure on the first mold structure, second overlay structures on the second mold structure, a third mold structure on the second mold structure, and third overlay structures on the third mold structure, wherein the first to third overlay structures are on an overlay mark region, and the first to third overlay structures are in at least one of quadrants in the overlay mark region.