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公开(公告)号:US10971537B2
公开(公告)日:2021-04-06
申请号:US16876925
申请日:2020-05-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seung-hun Shin , Duk-seo Park
IPC: H01L27/146 , H01L27/142
Abstract: An image sensor includes a semiconductor substrate including a pixel region and a pad region, a plurality of photoelectric conversion regions in the pixel region, an interconnect structure on a front surface of the semiconductor substrate, a pad structure in the pad region and on a rear surface of the semiconductor substrate, a through via structure in the pad region and electrically connected to the interconnect structure through the semiconductor substrate, and an isolation structure at least partially extending through the pad region of the semiconductor substrate from the rear surface of the semiconductor substrate. The isolation structure surrounds the pad structure and the through via structure in a plane extending parallel to the rear surface of the semiconductor substrate.
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2.
公开(公告)号:US09165974B2
公开(公告)日:2015-10-20
申请号:US14486389
申请日:2014-09-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sung-kwan Kim , Doo-won Kwon , Jeong-ki Kim , Wook-hwan Kim , Byung-jun Park , Seung-hun Shin , June-taeg Lee , Ha-kyu Choi , Tae-seok Oh
IPC: H01L31/00 , H01L27/146 , H01L23/00
CPC classification number: H01L27/14643 , H01L24/80 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/14689 , H01L27/1469 , H01L2224/05547 , H01L2224/08121 , H01L2224/80895 , H01L2224/80896
Abstract: An electronic device may include a first semiconductor layer, a first electrode layer on the semiconductor layer, an adhesive insulating layer on the first electrode layer, a second electrode layer on the adhesive insulating layer, a second semiconductor layer. The first electrode layer may include a first plurality of electrodes, the first electrode layer may be between the adhesive insulating layer and the first semiconductor layer, and the adhesive insulating layer may include at least one of SiOCN, SiBN, and/or BN. The second electrode layer may include a second plurality of electrodes, the adhesive insulating layer may be between the first and second electrode layers, and the second electrode layer may be between the adhesive insulating layer and the second semiconductor layer.
Abstract translation: 电子器件可以包括第一半导体层,半导体层上的第一电极层,第一电极层上的粘合绝缘层,粘合绝缘层上的第二电极层,第二半导体层。 第一电极层可以包括第一多个电极,第一电极层可以在粘合绝缘层和第一半导体层之间,并且粘合绝缘层可以包括SiOCN,SiBN和/或BN中的至少一种。 第二电极层可以包括第二多个电极,粘合绝缘层可以在第一和第二电极层之间,并且第二电极层可以在粘合绝缘层和第二半导体层之间。
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3.
公开(公告)号:US20150076649A1
公开(公告)日:2015-03-19
申请号:US14486389
申请日:2014-09-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sung-kwan KIM , Doo-Won Kwon , Jeong-ki Kim , Wook-hwan Kim , Byung-jun Park , Seung-hun Shin , June-taeg Lee , Ha-kyu Choi , Tae-Seok Oh
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L24/80 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/14689 , H01L27/1469 , H01L2224/05547 , H01L2224/08121 , H01L2224/80895 , H01L2224/80896
Abstract: An electronic device may include a first semiconductor layer, a first electrode layer on the semiconductor layer, an adhesive insulating layer on the first electrode layer, a second electrode layer on the adhesive insulating layer, a second semiconductor layer. The first electrode layer may include a first plurality of electrodes, the first electrode layer may be between the adhesive insulating layer and the first semiconductor layer, and the adhesive insulating layer may include at least one of SiOCN, SiBN, and/or BN. The second electrode layer may include a second plurality of electrodes, the adhesive insulating layer may be between the first and second electrode layers, and the second electrode layer may be between the adhesive insulating layer and the second semiconductor layer.
Abstract translation: 电子器件可以包括第一半导体层,半导体层上的第一电极层,第一电极层上的粘合绝缘层,粘合绝缘层上的第二电极层,第二半导体层。 第一电极层可以包括第一多个电极,第一电极层可以在粘合绝缘层和第一半导体层之间,并且粘合绝缘层可以包括SiOCN,SiBN和/或BN中的至少一种。 第二电极层可以包括第二多个电极,粘合绝缘层可以在第一和第二电极层之间,并且第二电极层可以在粘合绝缘层和第二半导体层之间。
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公开(公告)号:US10672823B2
公开(公告)日:2020-06-02
申请号:US16108348
申请日:2018-08-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seung-hun Shin , Duk-seo Park
IPC: H01L27/146 , H01L27/142
Abstract: An image sensor includes a semiconductor substrate including a pixel region and a pad region, a plurality of photoelectric conversion regions in the pixel region, an interconnect structure on a front surface of the semiconductor substrate, a pad structure in the pad region and on a rear surface of the semiconductor substrate, a through via structure in the pad region and electrically connected to the interconnect structure through the semiconductor substrate, and an isolation structure at least partially extending through the pad region of the semiconductor substrate from the rear surface of the semiconductor substrate. The isolation structure surrounds the pad structure and the through via structure in a plane extending parallel to the rear surface of the semiconductor substrate.
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