Abstract:
A method of fabricating a semiconductor device includes forming a gate electrode structure on a substrate, forming a first spacer material layer covering the gate electrode structure, forming a second spacer material layer covering the first spacer material layer, and etching the first and second spacer material layers using an etch-back process to form first and second spacers.
Abstract:
A projection-based augmented reality system and a control method thereof are provided. The control method of an augmented reality system includes determining a conversion area to be converted from a work area based on a first gesture, acquiring a captured image of the determined conversion area, generating a virtual image of the determined conversion area from the acquired captured image, displaying the generated virtual image in the work area, and performing a manipulation function with respect to the displayed virtual image based on a second gesture.