公开(公告)号：US11049754B2

公开(公告)日：2021-06-29

申请号：US16031321

申请日：2018-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seul Ha Myung ,  Min Joon Park ,  Hyo Sung Kim ,  Kyung Hoon Lee ,  Jae Hyun Lee

IPC: H01L21/683 ,  H01L21/3065 ,  H05H1/00 ,  H01J37/32

Abstract: A method of controlling a semiconductor process includes performing a semiconductor process using plasma in a chamber including an electrostatic chuck (ESC) on which a wafer is seated, obtaining an ESC voltage supplied to the ESC, an ESC current detected from the ESC, and bias power supplied to a bias electrode in the chamber, while the semiconductor process is being performed in the chamber, and determining whether a discharge has occurred between the ESC and the wafer using at least one of the ESC voltage, the ESC current, and the bias power.

公开(公告)号：US10964578B2

公开(公告)日：2021-03-30

申请号：US16401792

申请日：2019-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Mo Sung ,  Jong Woo Sun ,  Je Woo Han ,  Chan Hoon Park ,  Seung Yoon Song ,  Seul Ha Myung

IPC: H01L21/683 ,  H01L21/67

Abstract: A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

公开(公告)号：US11437264B2

公开(公告)日：2022-09-06

申请号：US17182613

申请日：2021-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Mo Sung ,  Jong Woo Sun ,  Je Woo Han ,  Chan Hoon Park ,  Seung Yoon Song ,  Seul Ha Myung

IPC: H01L21/68 ,  H01L21/683 ,  H01L21/67

Abstract: A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

公开(公告)号：US20190221403A1

公开(公告)日：2019-07-18

申请号：US16011095

申请日：2018-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seul Ha Myung ,  Hyo Sung Kim ,  Min Joon Park ,  Kyung Hoon Lee ,  Jae Hyun Lee

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/683

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  H01J37/32458 ,  H01J37/32724 ,  H01L21/6831

Abstract: A plasma processing apparatus can include a process chamber and a susceptor in a lower portion of the process chamber. A chuck can be on the susceptor, where the chuck can include an upper surface configured to mount a wafer thereon. A shower head can include a plurality of first regions including gas ports and including a plurality of gas supply pipes separately communicating with the first regions and configured to independently supply a process gas into the process chamber toward the upper surface of the chuck, where each of the gas ports in the first regions includes a plurality of sub-gas ports. A process gas supplier can be configured to supply the process gas to the gas supply pipes and a control unit configured to independently control amounts of the process gas supplied to the gas supply pipes.