ELECTRONIC DEVICE FOR FOLDER OPERATION, AND OPERATING METHOD THEREFOR

    公开(公告)号:US20220413685A1

    公开(公告)日:2022-12-29

    申请号:US17899051

    申请日:2022-08-30

    Abstract: An electronic device is provided. The electronic device includes a display, a memory storing executable instructions, and at least one processor, wherein, when the instructions stored in the memory are executed, the at least one processor is configured to, the occurrence of an event for generating a folder including at least one icon corresponding to at least one application; control the display to display a folder screen including the at least one icon; control the display to display at least two folder names corresponding to the at least one application, receive a user input for selecting a first folder name from among the displayed at least two folder names, and control the display to display the selected first folder name as the folder name of the folder on the folder screen.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20160307906A1

    公开(公告)日:2016-10-20

    申请号:US15196612

    申请日:2016-06-29

    Inventor: Seongho KIM

    Abstract: According to example embodiments, a semiconductor device may include a substrate having an upper surface defining a groove and an active region, a device isolation layer in the groove, and a contact structure on the active region. The device isolation exposes the active region and may have a top surface that is higher than a top surface of the active region. The contact structure may include a first portion filling a gap region delimited by a sidewall of the device isolation layer and the top surface of the active region, the contact structure may include and a second portion on the device isolation layer so the second portion overlaps with the device isolation layer in a plan view.

    Abstract translation: 根据示例性实施例,半导体器件可以包括具有限定凹槽和有源区的上表面的衬底,凹槽中的器件隔离层和有源区上的接触结构。 器件隔离暴露有源区,并且可以具有高于有源区的顶表面的顶表面。 接触结构可以包括填充由器件隔离层的侧壁和有源区的顶表面限定的间隙区域的第一部分,接触结构可以包括器件隔离层上的第二部分和第二部分与第 设备隔离层在平面图中。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20190189616A1

    公开(公告)日:2019-06-20

    申请号:US16281846

    申请日:2019-02-21

    Inventor: Seongho KIM

    Abstract: According to example embodiments, a semiconductor device may include a substrate having an upper surface defining a groove and an active region, a device isolation layer in the groove, and a contact structure on the active region. The device isolation exposes the active region and may have a top surface that is higher than a top surface of the active region. The contact structure may include a first portion filling a gap region delimited by a sidewall of the device isolation layer and the top surface of the active region, the contact structure may include and a second portion on the device isolation layer so the second portion overlaps with the device isolation layer in a plan view.

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