公开(公告)号：US20250151271A1

公开(公告)日：2025-05-08

申请号：US18675463

申请日：2024-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sehoon LEE ,  Bumkyu KANG ,  Sukkang SUNG ,  Younghwan SON

IPC: H10B43/27 ,  G11C16/04 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35 ,  H10B80/00

Abstract: A semiconductor device including a gate stacking structure, a plurality of channel structures, and a separation pattern. The plurality of channel structures including an adjacent channel structure including a first portion having a surface adjacent to the separation pattern and a separation surface spaced apart from the separation pattern. At least one of the gate dielectric layer or the channel layer is on the separation surface and the adjacent surface in the first portion of the adjacent channel structure.