公开(公告)号：US20210082809A1

公开(公告)日：2021-03-18

申请号：US16865544

申请日：2020-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooncheol Kim ,  Sangwoo HONG

IPC: H01L23/522 ,  H01L23/544 ,  H01L23/528 ,  H01L23/532 ,  H01L21/66

Abstract: A semiconductor device includes a substrate having a chip region and a scribe lane region having first edges extending in a first direction and second edges extending in a second direction, a first insulating interlayer structure on the scribe lane region and including a low-k dielectric material, first conductive structures on a portion of the scribe lane region adjacent one of the first edges and each extending through the first insulating interlayer structure in a vertical direction and extending in the first direction, a second insulating interlayer on the first insulating interlayer structure and including a material having a dielectric constant greater than that of the first insulating interlayer structure, first vias each extending in the first direction through the second insulating interlayer to contact one of the first conductive structures, and a first wiring commonly contacting upper surfaces of the first vias.