公开(公告)号：US20140319690A1

公开(公告)日：2014-10-30

申请号：US14258107

申请日：2014-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangryol YANG ,  Soonwook JUNG ,  Kyoungseob KIM ,  Youngsub YOU ,  Byunghong CHUNG ,  Hanmei CHOI

IPC: H01L29/40 ,  H01L21/283

CPC classification number: H01L21/283 ,  H01L21/76805 ,  H01L29/401

Abstract: A semiconductor device includes a storage node contact on a substrate, and a lower electrode on the storage node contact, a lower sidewall of the lower electrode being covered by a contact residue of a same material as the storage node contact.

Abstract translation: 半导体器件包括在衬底上的存储节点接触和存储节点接触件上的下电极，下电极的下侧壁由与存储节点接触件相同的材料的接触残余物覆盖。

公开(公告)号：US20140162440A1

公开(公告)日：2014-06-12

申请号：US14082657

申请日：2013-11-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Ho Kim ,  Daehyun JANG ,  Myoungbum LEE ,  Kihyun HWANG ,  Sangryol YANG ,  Yong-Hoon SON ,  Ju-Eun KIM ,  Sunghae LEE ,  Dongwoo KIM ,  JinGyun KIM

IPC: H01L27/115 ,  H01L21/02

CPC classification number: H01L27/11582 ,  H01L21/02675 ,  H01L21/30604 ,  H01L21/324 ,  H01L27/11551 ,  H01L27/11578 ,  H01L29/7926

Abstract: Methods of forming semiconductor devices may be provided. A method of forming a semiconductor device may include patterning first and second material layers to form a first through region exposing a substrate. The method may include forming a first semiconductor layer in the first through region on the substrate and on sidewalls of the first and second material layers. In some embodiments, the method may include forming a buried layer filling the first through region on the first semiconductor layer. In some embodiments, the method may include removing a portion of the buried layer to form a second through region between the sidewalls of the first and second material layers. Moreover, the method may include forming a second semiconductor layer in the second through region.

Abstract translation: 可以提供形成半导体器件的方法。 形成半导体器件的方法可以包括图案化第一和第二材料层以形成暴露衬底的第一穿透区域。 该方法可以包括在衬底上的第一至区域中以及在第一和第二材料层的侧壁上形成第一半导体层。 在一些实施例中，该方法可以包括形成填充第一半导体层上的第一通过区域的掩埋层。 在一些实施例中，该方法可以包括移除掩埋层的一部分以在第一和第二材料层的侧壁之间形成第二穿透区域。 此外，该方法可以包括在第二通过区域中形成第二半导体层。