公开(公告)号：US20240381623A1

公开(公告)日：2024-11-14

申请号：US18412858

申请日：2024-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungha LEE ,  Jiho PARK ,  Seok-Won KIM ,  Sanghyeok YU

IPC: H10B12/00

Abstract: A semiconductor device includes a substrate; a bit line disposed on the substrate and extending in a first direction; a first interlayer insulating layer disposed on the bit line, and including a channel trench extending in a second direction crossing the first direction; a second interlayer insulating layer disposed on the first interlayer insulating layer; a channel pattern disposed in the channel trench; a word line extending in the second direction and spaced apart from the channel pattern; a gate insulating pattern disposed between the channel pattern and the word line; an insulating pattern disposed on the word line; and a landing pad connected to the channel pattern. The landing pad includes a first protrusion disposed between the channel pattern and the second interlayer insulating layer, and a second protrusion disposed between the channel pattern and the insulating pattern.