公开(公告)号：US20140374772A1

公开(公告)日：2014-12-25

申请号：US14483036

申请日：2014-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-In YANG ,  Tae-Hyung KIM ,  Si-Hyuk LEE ,  Sang-Yeob SONG ,  Cheol-Soo SONE ,  Hak-Hwan KIM ,  Jin-Hyun LEE

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/40

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract translation: 半导体发光器件及其制造方法。 半导体发光器件包括依次堆叠在衬底上的第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，通过 基板与第一电极层电连接，第二触点通过基板，第一电极层和绝缘层与第二电极层连通。 第一电极层通过填充穿过第二电极层，第二半导体层和有源层的接触孔而电连接到第一半导体层，并且绝缘层围绕接触孔的内周表面以绝缘 来自第二电极层的第一电极层。

公开(公告)号：US20150115281A1

公开(公告)日：2015-04-30

申请号：US14594039

申请日：2015-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-In YANG ,  Tae-Hyung KIM ,  Si-Hyuk LEE ,  Sang-Yeob SONG ,  Cheol-Soo SONE ,  Hak-Hwan KIM ,  Jin-Hyun LEE

IPC: H01L33/32 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

公开(公告)号：US20140231849A1

公开(公告)日：2014-08-21

申请号：US14094942

申请日：2013-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Yeob SONG ,  Gi-Bum KIM ,  Hyun-Young KIM ,  Ju-Heon YOON ,  Wan-Ho LEE ,  Won-Goo HUR

IPC: H01L33/60

CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor light-emitting devices including a semiconductor region that includes a light-emitting structure; and an electrode layer including a first reflection metal layer that contacts a first portion of the semiconductor region and being configured to reflect light from the light-emitting structure and a second reflection metal layer that contacts a second portion of the semiconductor region and being configured to reflect light from the light-emitting structure, wherein the second reflection metal layer is spaced apart from the first reflection metal layer and at least partially covers the first reflection metal layer.

Abstract translation: 包括包括发光结构的半导体区域的半导体发光器件; 以及电极层，其包括与所述半导体区域的第一部分接触并且被配置为反射来自所述发光结构的光的第一反射金属层和与所述半导体区域的第二部分接触的第二反射金属层， 反射来自发光结构的光，其中第二反射金属层与第一反射金属层间隔开并且至少部分地覆盖第一反射金属层。

公开(公告)号：US20150125983A1

公开(公告)日：2015-05-07

申请号：US14594020

申请日：2015-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-In YANG ,  Tae-Hyung KIM ,  Si-Hyuk LEE ,  Sang-Yeob SONG ,  Cheol-Soo SONE ,  Hak-Hwan KIM ,  Jin-Hyun LEE

IPC: H01L33/62 ,  H01L33/00

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.