公开(公告)号：US20140231849A1

公开(公告)日：2014-08-21

申请号：US14094942

申请日：2013-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Yeob SONG ,  Gi-Bum KIM ,  Hyun-Young KIM ,  Ju-Heon YOON ,  Wan-Ho LEE ,  Won-Goo HUR

IPC: H01L33/60

CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor light-emitting devices including a semiconductor region that includes a light-emitting structure; and an electrode layer including a first reflection metal layer that contacts a first portion of the semiconductor region and being configured to reflect light from the light-emitting structure and a second reflection metal layer that contacts a second portion of the semiconductor region and being configured to reflect light from the light-emitting structure, wherein the second reflection metal layer is spaced apart from the first reflection metal layer and at least partially covers the first reflection metal layer.

Abstract translation: 包括包括发光结构的半导体区域的半导体发光器件; 以及电极层，其包括与所述半导体区域的第一部分接触并且被配置为反射来自所述发光结构的光的第一反射金属层和与所述半导体区域的第二部分接触的第二反射金属层， 反射来自发光结构的光，其中第二反射金属层与第一反射金属层间隔开并且至少部分地覆盖第一反射金属层。