公开(公告)号：US10784198B2

公开(公告)日：2020-09-22

申请号：US15681243

申请日：2017-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rwik Sengupta ,  Andrew Paul Hoover ,  Matthew Berzins ,  Sam Tower ,  Mark S. Rodder

IPC: H01L23/528 ,  H01L27/02 ,  H01L23/522 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/768 ,  H01L21/321 ,  H01L23/532 ,  H01L27/118

Abstract: A semiconductor integrated circuit including a substrate, a series of metal layers, and a series of insulating layers. The metal layers and the insulating layers are alternately arranged in a stack on the substrate. The semiconductor integrated circuit also includes at least two standard cells in the substrate and at least one power rail crossing over boundaries of the at least two standard cells. The power rail includes a vertical section of conductive material extending continuously through at least two vertical levels of the stack. The two vertical levels of the stack include one metal layer and one insulating layer. The insulating layer is above the metal layer.

公开(公告)号：US20180269152A1

公开(公告)日：2018-09-20

申请号：US15681243

申请日：2017-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rwik Sengupta ,  Andrew Paul Hoover ,  Matthew Berzins ,  Sam Tower ,  Mark S. Rodder

IPC: H01L23/528 ,  H01L27/02 ,  H01L23/522 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/768 ,  H01L21/321

Abstract: A semiconductor integrated circuit including a substrate, a series of metal layers, and a series of insulating layers. The metal layers and the insulating layers are alternately arranged in a stack on the substrate. The semiconductor integrated circuit also includes at least two standard cells in the substrate and at least one power rail crossing over boundaries of the at least two standard cells. The power rail includes a vertical section of conductive material extending continuously through at least two vertical levels of the stack. The two vertical levels of the stack include one metal layer and one insulating layer. The insulating layer is above the metal layer.