公开(公告)号：US20250044845A1

公开(公告)日：2025-02-06

申请号：US18527220

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Praveen FRANCIS ,  Samantika SURY ,  Alfredo METERE ,  David LOMBARD

IPC: G06F1/26

Abstract: Provided are systems, methods, and apparatuses for obtaining first data of a power domain of a system on chip and second data of the power domain, predicting an expected power for the power domain based on the first data and the second data, and applying to the power domain a power level that is selected based on the expected power. The first data is utilization data. The second data is thermal data that includes at least one of a spatial thermal limit or a positional thermal limit of the power domain. The spatial thermal limit is based on at least one of a proximity of the power domain to a component outside the power domain or a power level of the component at a time when the expected power is calculated. The positional thermal limit is based on a location of the power domain on the system on chip.