公开(公告)号：US20140094012A1

公开(公告)日：2014-04-03

申请号：US14012588

申请日：2013-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Il Chang ,  Park Youngwoo ,  Kwang Soo Seol

IPC: H01L27/115

CPC classification number: H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: Provided are three-dimensional semiconductor devices. A device includes an electrode structure including conductive patterns sequentially stacked on a substrate, a semiconductor pattern penetrating the electrode structure and including channel regions adjacent to the conductive patterns and vertical adjacent regions between the channel regions, and a semiconductor connecting layer extending from an outer sidewall of the semiconductor pattern to connect the semiconductor pattern to the substrate.

Abstract translation: 提供三维半导体器件。 一种器件包括：电极结构，包括依次层叠在衬底上的导电图案，穿透电极结构的半导体图案，以及包括与导电图案相邻的沟道区域和沟道区域之间的垂直相邻区域;以及从外侧壁延伸的半导体连接层 的半导体图案以将半导体图案连接到基板。