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1.发明授权公开(公告)号：US09306049B2
公开(公告)日：2016-04-05
申请号：US14062284
申请日：2013-10-24
发明人： JaeHoon Lee , Chanho Park , NamYoung Lee
IPC分类号： H01L29/66 , H01L29/778 , H01L29/423 , H01L29/06 , H01L29/10 , H01L29/20
CPC分类号： H01L29/778 , H01L29/0607 , H01L29/1029 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： Hetero junction field effect transistors and methods of fabricating such transistors are disclosed wherein: a first compound semiconductor layer is provided on a substrate; a second compound semiconductor layer is provided on the first compound semiconductor layer; a gate insulating layer is provided on the second compound semiconductor layer; and a gate electrode is provided on the gate insulating layer such that the gate insulating layer penetrates the second compound semiconductor layer so as to be in contact with the first compound semiconductor layer.
摘要翻译： 公开了异质结场效应晶体管和制造这种晶体管的方法，其中：第一化合物半导体层设置在基板上; 在第一化合物半导体层上设置第二化合物半导体层; 在第二化合物半导体层上设置栅极绝缘层; 并且栅极电极设置在栅极绝缘层上，使得栅极绝缘层穿透第二化合物半导体层以与第一化合物半导体层接触。
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2.发明申请公开(公告)号：US20140138747A1
公开(公告)日：2014-05-22
申请号：US14062284
申请日：2013-10-24
发明人： JaeHoon Lee , Chanho Park , NamYoung Lee
IPC分类号： H01L29/778
CPC分类号： H01L29/778 , H01L29/0607 , H01L29/1029 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： Hetero junction field effect transistors and methods of fabricating such transistors are disclosed wherein: a first compound semiconductor layer is provided on a substrate; a second compound semiconductor layer is provided on the first compound semiconductor layer; a gate insulating layer is provided on the second compound semiconductor layer; and a gate electrode is provided on the gate insulating layer such that the gate insulating layer penetrates the second compound semiconductor layer so as to be in contact with the first compound semiconductor layer.
摘要翻译： 公开了异质结场效应晶体管和制造这种晶体管的方法，其中：第一化合物半导体层设置在基板上; 在第一化合物半导体层上设置第二化合物半导体层; 在第二化合物半导体层上设置栅极绝缘层; 并且栅极电极设置在栅极绝缘层上，使得栅极绝缘层穿透第二化合物半导体层以与第一化合物半导体层接触。
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