公开(公告)号：US20170352543A1

公开(公告)日：2017-12-07

申请号：US15682852

申请日：2017-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin PARK ,  Hyun-woo KIM ,  Myeong-koo KIM

IPC: H01L21/033 ,  G03F7/11 ,  H01L21/027 ,  C09D179/08

CPC classification number: H01L21/0337 ,  C08G73/08 ,  C08G73/1042 ,  C08G73/1067 ,  C09D179/08 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0276 ,  H01L21/0332

Abstract: A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide group, and a solvent. A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, coating the feature layer with a composition including alkyne and azide, forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition, forming a photoresist film on the carbon-containing layer, forming photoresist patterns by exposing and developing the photoresist film, and patterning the carbon-containing layer and the feature layer using the photoresist patterns.

公开(公告)号：US20170062217A1

公开(公告)日：2017-03-02

申请号：US15148622

申请日：2016-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin PARK ,  Hyun-woo KIM ,  Myeong-koo KIM

IPC: H01L21/033 ,  C09D179/08 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L21/0337 ,  C08G73/08 ,  C08G73/1042 ,  C08G73/1067 ,  C09D179/08 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  H01L21/0276 ,  H01L21/0332

Abstract: A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide group, and a solvent. A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, coating the feature layer with a composition including alkyne and azide, forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition, forming a photoresist film on the carbon-containing layer, forming photoresist patterns by exposing and developing the photoresist film, and patterning the carbon-containing layer and the feature layer using the photoresist patterns.

Abstract translation: 用于制造半导体器件的组合物包括至少一种包含炔基和叠氮基中的至少一种的碳基化合物和溶剂。 一种制造半导体器件的方法包括在基片上形成特征层，用包含炔和叠氮化物的组合物涂覆该特征层，通过对涂覆组合物进行热处理形成包含三唑化合物的含碳层，形成 在含碳层上形成光致抗蚀剂膜，通过曝光和显影光致抗蚀剂膜形成光致抗蚀剂图案，并使用光致抗蚀剂图案图案化含碳层和特征层。