公开(公告)号：US20190148521A1

公开(公告)日：2019-05-16

申请号：US16170842

申请日：2018-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun Ho JO ,  Dae Joung KIM ,  Jae Mun KIM ,  Moon Han PARK ,  Tae Ho CHA ,  Jae Jong HAN

IPC: H01L29/66 ,  H01L21/02

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

公开(公告)号：US20200243398A1

公开(公告)日：2020-07-30

申请号：US16848228

申请日：2020-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun Ho JO ,  Dae Joung KIM ,  Jae Mun KIM ,  Moon Han PARK ,  Tae Ho CHA ,  Jae Jong HAN

IPC: H01L21/8238 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L21/84 ,  H01L21/8234 ,  H01L29/786

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.