Abstract:
Provided are an image sensor and an image capturing apparatus including the image sensor. The image sensor includes a pixel array including: multiple sensing pixels outputting image signals respectively corresponding to intensities of incident light; and at least one pair of focusing pixels that are adjacent each other, and each outputting a phase difference of the incident light as a focusing signal; wherein each focusing pixel includes: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a wiring layer formed on a first surface of the semiconductor layer and including wirings; a planarization layer having a first surface on a second surface of the semiconductor layer; a shielding layer formed in the planarization layer to block some of the incident light to be incident to the photodetecting device; and a color filter layer and a micro lens layer.
Abstract:
A pixel circuit includes a first photocharge accumulator including at least two photodiodes exposed to light for a long period of time, and a second photocharge accumulator including at least one photodiode exposed to light for a short period of time. The pixel circuit includes a first transfer controller that transfers photocharges accumulated in the first photocharge accumulator to a floating diffusion area, and a second transfer controller that transfers photocharges accumulated in the second photocharge accumulator to the floating diffusion area. The pixel circuit includes a driving transistor to generate a pixel signal according to the photocharges transferred to the floating diffusion area. A number of photodiodes of the first photocharge accumulator is greater than a number of photodiodes of the second photocharge accumulator.
Abstract:
Provided are an image sensor and an image capturing apparatus including the image sensor. The image sensor includes a pixel array including: multiple sensing pixels outputting image signals respectively corresponding to intensities of incident light; and at least one pair of focusing pixels that are adjacent each other, and each outputting a phase difference of the incident light as a focusing signal; wherein each focusing pixel includes: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a wiring layer formed on a first surface of the semiconductor layer and including wirings; a planarization layer having a first surface on a second surface of the semiconductor layer; a shielding layer formed in the planarization layer to block some of the incident light to be incident to the photodetecting device; and a color filter layer and a micro lens layer.
Abstract:
A pixel and pixel array for use in an image sensor are provided. The image sensor includes floating sensing nodes symmetrically arranged with respect to a photodiode in each pixel.