公开(公告)号：US10094045B2

公开(公告)日：2018-10-09

申请号：US15472467

申请日：2017-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mi-Hyun Kim ,  Sam-Mook Kang ,  Jun-Youn Kim ,  Young-Jo Tak ,  Young-Soo Park

IPC: C30B25/02 ,  C30B25/18 ,  H01L21/02 ,  H01L21/78 ,  C30B25/10 ,  C30B29/40 ,  C30B29/06 ,  C30B25/16

Abstract: In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed.

公开(公告)号：USD712441S1

公开(公告)日：2014-09-02

申请号：US29454033

申请日：2013-05-06

Applicant: Samsung Electronics Co., Ltd.

Designer： Mi-Hyun Kim ,  Da-Jeong Kim ,  Ae-Ryun Kim ,  Jang-Won Kim ,  Hyun-Soo Kim