公开(公告)号：US09484423B2

公开(公告)日：2016-11-01

申请号：US14270690

申请日：2014-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Borna J. Obradovic ,  Jorge A. Kittl ,  Mark. S. Rodder

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L29/78681 ,  H01L29/78696

Abstract: A field effect transistor includes a body layer comprising a crystalline semiconductor channel region therein, and a gate stack on the channel region. The gate stack includes a crystalline semiconductor gate layer, and a crystalline semiconductor gate dielectric layer between the gate layer and the channel region. Related devices and fabrication methods are also discussed.

Abstract translation: 场效应晶体管包括其中包括晶体半导体沟道区的主体层，以及沟道区上的栅叠层。 栅极堆叠包括晶体半导体栅极层和栅极层和沟道区之间的晶体半导体栅极介电层。 还讨论了相关设备和制造方法。