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    Semiconductor devices including channel pattern and method for manufacturing the same
    2.
    发明授权
    Semiconductor devices including channel pattern and method for manufacturing the same 有权

    公开(公告)号：US11716845B2

    公开(公告)日：2023-08-01

    申请号：US17078593

    申请日：2020-10-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Lee Sanghoon

    IPC: H01L27/11582 ,  H10B43/27 ,  G11C7/18 ,  H10B43/10

    CPC classification number: H10B43/27 ,  G11C7/18 ,  H10B43/10

    Abstract: A semiconductor device includes a gate structure on a substrate, the gate structure including insulating layers and gate electrodes, which are alternately stacked, a channel structure extending through the gate structure, and a source conductive pattern between the substrate and the gate structure. The source conductive pattern includes a lower source conductive pattern and an upper source conductive pattern on the lower source conductive pattern. The channel structure includes an insulating pattern extending through the source conductive pattern, a data storage pattern, and a channel pattern between the insulating pattern and the data storage pattern. A lower surface of the channel pattern is at a level higher than an upper surface of the upper source conductive pattern, but lower than a lower surface of a lowermost one of the gate electrodes in a cross-sectional view of the semiconductor device with the substrate providing a base reference level.

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