公开(公告)号：US20250169064A1

公开(公告)日：2025-05-22

申请号：US18735338

申请日：2024-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bitna Kim ,  Jinbum Kim ,  Kyeonggyu Lee ,  Sunguk Jang ,  Sunghwan Jang ,  Wonhee Choi

IPC: H10B12/00

Abstract: A semiconductor device includes a bit line on a substrate, a channel on the bit line, a first gate structure on a first sidewall of the channel, a contact structure between the bit line and the channel, the contact structure contacting the bit line and the channel, the contact structure including: a first contact including a semiconductor material doped with first impurities, the first impurities including a first diffusion coefficient, and a second contact on the first contact, the second contact contacting the first contact, the second contact including a semiconductor material doped with second impurities, the second impurities including a second diffusion coefficient, the second diffusion coefficient being less than the first diffusion coefficient, and a capacitor on and electrically connected to the channel.