公开(公告)号：US20240069782A1

公开(公告)日：2024-02-29

申请号：US18237806

申请日：2023-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Whan BAE ,  Junyeong HAN ,  Kui-Yon MUN ,  Heetak SHIN

IPC: G06F3/06

CPC classification number: G06F3/0652 ,  G06F3/0604 ,  G06F3/0631 ,  G06F3/0647 ,  G06F3/0679

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to, based on receiving an open zone command from an external host device: based on a number of free erase units from among a plurality of erase units included in the plurality of memory cells being greater than a threshold value, allocate at least two free erase units to a first-type zone, and based on the number of the free erase units being smaller than or equal to the threshold value, allocate the at least two free erase units to a second-type zone. wherein the controller is further configured to permit a random write based on a random logical address received from the external host device for the first-type zone, and to permit a zone write based on a sequential logical address received from the external host device for the second-type zone.

公开(公告)号：US20240069750A1

公开(公告)日：2024-02-29

申请号：US18240169

申请日：2023-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kui-Yon MUN ,  Junyeong HAN ,  Jooyoung HWANG ,  Gyeongmin KIM ,  Keunsan PARK ,  Joon-Whan BAE ,  Heetak SHIN ,  Seunghyun CHOI

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0631 ,  G06F3/0652 ,  G06F3/0679

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device in response to a request of an external host device, select two or more erase units among a plurality of erase units of the plurality of memory cells to be allocated to each of the plurality of zones based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, wherein the controller includes an internal buffer configured to store first data to be written in a first zone from among the plurality of zones, and wherein the controller is further configured to perform a backup operation for the first data by selecting an erase unit in which the first data are to be written, and a cell type of the erase unit based on a feature of the first zone.

公开(公告)号：US20160034189A1

公开(公告)日：2016-02-04

申请号：US14662736

申请日：2015-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： YoungWook KIM ,  Kui-Yon MUN ,  Soong-Mann SHIN ,  Jae-Sung YU

IPC: G06F3/06 ,  G11C16/04

CPC classification number: G06F3/061 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0688 ,  G11C7/04 ,  G11C16/0466

Abstract: A storage device includes a nonvolatile memory and a memory controller. The nonvolatile memory performs read, write, and erase operations. The memory controller operates in an operating mode where the memory controller exchanges a voltage signal, set to a reference voltage level within an allowable range, with the nonvolatile memory or receives the voltage signal from an external device. When operating in the operating mode, the memory controller optimizes an operating frequency of the nonvolatile memory depending on a voltage level of the voltage signal and a temperature.

Abstract translation: 存储装置包括非易失性存储器和存储器控制器。 非易失性存储器执行读，写和擦除操作。 存储器控制器在操作模式下操作，其中存储器控制器与非易失性存储器交换设置到允许范围内的参考电压电平的电压信号或从外部设备接收电压信号。 当在操作模式下操作时，存储器控制器根据电压信号的电压电平和温度优化非易失性存储器的工作频率。