公开(公告)号：US20250098295A1

公开(公告)日：2025-03-20

申请号：US18817500

申请日：2024-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kibum Nam ,  Bonghyun Lee

IPC: H01L27/092 ,  H01L27/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: An integrated circuit comprising: a plurality of first gate electrodes extending in a second direction perpendicular to a first direction, wherein the plurality of first gate electrodes is in a first row that extends in the first direction; a first active pattern group comprising a plurality of first active patterns that extend in the first row in the first direction and intersecting the plurality of first gate electrodes; a plurality of second gate electrodes extending in the second direction in a second row that extends in the first direction; and a second active pattern group comprising a plurality of second active patterns extending in the second row in the first direction and intersecting the plurality of second gate electrodes, wherein ones of the plurality of first active patterns have different widths in the second direction, and the plurality of second active patterns have a first width in the second direction.