公开(公告)号：US20230268248A1

公开(公告)日：2023-08-24

申请号：US18310284

申请日：2023-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seonho LEE ,  Jinsu KIM ,  Junwoo MYUNG ,  Yongjin PARK ,  Jaekul LEE

IPC: H01L23/373 ,  H01L23/498 ,  H01L23/053 ,  H01L23/31

CPC classification number: H01L23/3735 ,  H01L23/49822 ,  H01L23/053 ,  H01L23/3128

Abstract: A semiconductor device including a semiconductor chip having a first surface and a second surface opposite to the first surface, a first heat dissipation member on the second surface of the semiconductor chip, the first heat dissipation member having a vertical thermal conductivity in a direction perpendicular to the second surface, and a horizontal thermal conductivity in a direction parallel to the second surface, the first vertical thermal conductivity being smaller than the first horizontal thermal conductivity, and a second heat dissipation member comprising a vertical pattern penetrating the first heat dissipation member, the second heat dissipation member having a vertical thermal conductivity that is greater than the vertical thermal conductivity of the first heat dissipation member may be provided.

公开(公告)号：US20210193555A1

公开(公告)日：2021-06-24

申请号：US17029334

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seonho LEE ,  Jinsu KIM ,  Junwoo MYUNG ,  Yongjin PARK ,  Jaekul LEE

IPC: H01L23/373 ,  H01L23/31 ,  H01L23/053 ,  H01L23/498

Abstract: A semiconductor device including a semiconductor chip having a first surface and a second surface opposite to the first surface, a first heat dissipation member on the second surface of the semiconductor chip, the first heat dissipation member having a vertical thermal conductivity in a direction perpendicular to the second surface, and a horizontal thermal conductivity in a direction parallel to the second surface, the first vertical thermal conductivity being smaller than the first horizontal thermal conductivity, and a second heat dissipation member comprising a vertical pattern penetrating the first heat dissipation member, the second heat dissipation member having a vertical thermal conductivity that is greater than the vertical thermal conductivity of the first heat dissipation member may be provided.

公开(公告)号：US20240145326A1

公开(公告)日：2024-05-02

申请号：US18323680

申请日：2023-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungchul OH ,  Junwoo MYUNG ,  Jangbae SON ,  Gun LEE

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/498

CPC classification number: H01L23/3128 ,  H01L21/568 ,  H01L23/49822 ,  H01L24/16 ,  H01L2224/16227

Abstract: A method of manufacturing a semiconductor package includes adding an insulating frame to a surface of a carrier substrate, wherein the insulating frame covers a side surface of a first metal layer on the surface of the carrier substrate and bringing a cover insulating layer into contact with the insulating frame and the first metal layer, wherein the cover insulating layer covers at least one semiconductor chip.