公开(公告)号：US10930675B2

公开(公告)日：2021-02-23

申请号：US16669639

申请日：2019-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Woo Seo ,  Ki-Man Park ,  Ha-Young Kim ,  Junghwan Shin ,  Keunho Lee ,  Sungwe Cho

IPC: H03K3/289 ,  H01L27/118 ,  H01L27/02 ,  H03K3/3562

Abstract: Disclosed is a semiconductor device including a substrate with first and second regions adjacent to each other in a first direction, and first to third gate electrodes extending from the first region toward the second region. Each of the first and second regions includes a PMOSFET region and an NMOSFET region. The first to third gate electrodes extend in the first direction and are sequentially arranged in a second direction different from the first direction. The first and third gate electrodes are supplied with a first signal. The second gate electrode is supplied with a second signal that is an inverted signal of the first signal. The first gate electrode includes a first gate of the first region and a first gate of the second region. The first gates are aligned and connected with each other in the first direction.

公开(公告)号：US11201172B2

公开(公告)日：2021-12-14

申请号：US17153939

申请日：2021-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Woo Seo ,  Ki-Man Park ,  Ha-Young Kim ,  Junghwan Shin ,  Keunho Lee ,  Sungwe Cho

IPC: H03K3/356 ,  H01L27/118 ,  H01L27/02 ,  H03K3/3562

Abstract: Disclosed is a semiconductor device including a substrate with first and second regions adjacent to each other in a first direction, and first to third gate electrodes extending from the first region toward the second region. Each of the first and second regions includes a PMOSFET region and an NMOSFET region. The first to third gate electrodes extend in the first direction and are sequentially arranged in a second direction different from the first direction. The first and third gate electrodes are supplied with a first signal. The second gate electrode is supplied with a second signal that is an inverted signal of the first signal. The first gate electrode includes a first gate of the first region and a first gate of the second region. The first gates are aligned and connected with each other in the first direction.