公开(公告)号：US20220102358A1

公开(公告)日：2022-03-31

申请号：US17461051

申请日：2021-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong PARK ,  Jae-Wha PARK ,  Moon Keun KIM ,  Jung Ha HWANG

IPC: H01L27/108

Abstract: A semiconductor memory device may include at least one semiconductor pattern including a horizontal portion extending in a second direction parallel to a top surface of a semiconductor substrate and a vertical portion extending in the first direction, at least one gate electrode on the horizontal portion of the at least one semiconductor pattern and extending in a third direction different from the first direction and the second direction, and at least one information storage element connected to the vertical portion of the at least one semiconductor pattern, wherein a thickness of the horizontal portion of the at least one semiconductor pattern in the first direction is smaller than a thickness of the vertical portion of the at least one semiconductor pattern in the first direction.

公开(公告)号：US20240292608A1

公开(公告)日：2024-08-29

申请号：US18659188

申请日：2024-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong PARK ,  Jae-Wha PARK ,  Moon Keun KIM ,  Jung Ha HWANG

IPC: H10B12/00 ,  G11C5/06

CPC classification number: H10B12/50 ,  H10B12/33 ,  G11C5/063

Abstract: A semiconductor memory device may include at least one semiconductor pattern including a horizontal portion extending in a second direction parallel to a top surface of a semiconductor substrate and a vertical portion extending in the first direction, at least one gate electrode on the horizontal portion of the at least one semiconductor pattern and extending in a third direction different from the first direction and the second direction, and at least one information storage element connected to the vertical portion of the at least one semiconductor pattern, wherein a thickness of the horizontal portion of the at least one semiconductor pattern in the first direction is smaller than a thickness of the vertical portion of the at least one semiconductor pattern in the first direction.