公开(公告)号：US10014181B2

公开(公告)日：2018-07-03

申请号：US15215152

申请日：2016-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-soo Lee ,  Hong-rae Kim ,  Jeon-il Lee

IPC: H01L21/308 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/3081 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/3086 ,  H01L29/6656 ,  H01L29/66795

Abstract: Methods of forming patterns for semiconductor devices are provided. A method may include preparing a substrate including an etch target layer on a surface of the substrate; forming a mask pattern that includes a lower masking layer having a first density and an upper masking layer having a second density that is less than the first density, on the etch target layer; forming spacers that cover sidewalls of the lower masking layer and the upper masking layer; removing the mask pattern; and etching the etch target layer by using the spacers as an etching mask.

公开(公告)号：US10290527B2

公开(公告)日：2019-05-14

申请号：US15924978

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-soo Lee ,  Jae-hoon Kim ,  Kyung-hak Min

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/687

Abstract: The inventive concept provides a method of manufacturing a semiconductor device using a plasma etching apparatus including an alignment chamber and a process chamber. The method includes: loading a wafer in the alignment chamber of the plasma etching apparatus; rotating the wafer loaded in the alignment chamber according to a plurality of heating zones arranged in an electrostatic chuck of the process chamber, thereby rotating a reference point of the wafer; transferring the wafer that was rotated in the alignment chamber onto the electrostatic chuck of the process chamber; and plasma-etching the wafer that was rotated in the alignment chamber on the electrostatic chuck of the process chamber.

公开(公告)号：US20190080948A1

公开(公告)日：2019-03-14

申请号：US15924978

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-soo Lee ,  Jae-hoon Kim ,  Kyung-hak Min

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065 ,  H01J37/32

Abstract: The inventive concept provides a method of manufacturing a semiconductor device using a plasma etching apparatus including an alignment chamber and a process chamber. The method includes: loading a wafer in the alignment chamber of the plasma etching apparatus; rotating the wafer loaded in the alignment chamber according to a plurality of heating zones arranged in an electrostatic chuck of the process chamber, thereby rotating a reference point of the wafer; transferring the wafer that was rotated in the alignment chamber onto the electrostatic chuck of the process chamber; and plasma-etching the wafer that was rotated in the alignment chamber on the electrostatic chuck of the process chamber.