公开(公告)号：US20240258443A1

公开(公告)日：2024-08-01

申请号：US18630449

申请日：2024-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insung JOE ,  Jonghwa SHIN ,  Joonkyo JUNG ,  Jong Uk KIM

IPC: H01L31/0232 ,  H01L31/102

CPC classification number: H01L31/02327 ,  H01L31/102

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

公开(公告)号：US20220384666A1

公开(公告)日：2022-12-01

申请号：US17671697

申请日：2022-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insung JOE ,  Jonghwa SHIN ,  Joonkyo JUNG ,  Jong Uk KIM

IPC: H01L31/0232 ,  H01L31/102

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.