公开(公告)号：US20220271044A1

公开(公告)日：2022-08-25

申请号：US17515888

申请日：2021-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok Hyun Kim ,  Young Sin Kim ,  Dong Sik Park ,  Jong Min Lee ,  Joon Yong Choe

IPC: H01L27/108 ,  H01L29/66 ,  H01L21/768

Abstract: A semiconductor device comprises a substrate comprising a cell region; a cell region isolation film in the substrate and extending along an outer edge of the cell region; a bit-line structure on the substrate and in the cell region, wherein the bit-line structure has a distal end positioned on the cell region isolation film; a cell spacer on a vertical side surface of the distal end of the bit-line structure; an etching stopper film extending along a side surface of the cell spacer and a top face of the cell region isolation film; and an interlayer insulating film on the etching stopper film, and on the side surface of the cell spacer, wherein the interlayer insulating film includes silicon nitride.

公开(公告)号：US11778810B2

公开(公告)日：2023-10-03

申请号：US17332307

申请日：2021-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin A Kim ,  Ho-In Ryu ,  Kyo-Suk Chae ,  Joon Yong Choe

IPC: H10B12/00

CPC classification number: H10B12/34 ,  H10B12/315 ,  H10B12/482 ,  H10B12/485

Abstract: A semiconductor device may include a substrate including trenches and contact recesses having a curved surface profile, conductive patterns in the trenches, buried contacts including first portions filling the contact recesses and second portions on the first portions, and spacer structures including first and second spacers. The second portions may have a pillar shape and a smaller width than top surfaces of the first portions. The buried contacts may be spaced apart from the conductive patterns by the spacer structures. The first spacers may be on the first portions of the buried contacts at outermost parts of the spacer structures. The first spacers may extend along the second portions of the buried contacts and contact the buried contacts. The second spacers may extend along the side surfaces of the conductive patterns and the trenches. The second spacers may contact the conductive patterns. The first spacers may include silicon oxide.