Abstract:
A stretchable device includes a substrate, the substrate including first regions having a first stiffness and a second region between adjacent first regions and having a second stiffness that is lower than the first stiffness, a unit device array including unit devices on separate, respective first regions of the substrate, and an encapsulant covering the unit device array. The unit device array includes pixel electrodes isolated on separate, respective first regions of the substrate, common electrodes isolated on separate, respective first regions and each facing a separate pixel electrode, the stretchable device configured to apply a same voltage to the plurality of common electrodes, and active layers on separate, respective first regions and each between a separate pixel electrode and a separate common electrode.
Abstract:
Disclosed are an apparatus for measuring an in-situ crosslink density includes a support configured to fix or support a cross-linkable structure, a light source configured to irradiate light for crosslinking to the cross-linkable structure, and a probe configured to provide in-situ micro-deformation to the cross-linkable structure, wherein the in-situ crosslink density of the cross-linkable structure is measured from a stress-strain phase lag of the cross-linkable structure by the in-situ micro-deformation, a method of measuring the in-situ crosslink density, a method of manufacturing a crosslinked product, a crosslinked product obtained by the method, and a polymer substrate and an electronic device including the crosslinked product.
Abstract:
A method of manufacturing a thin film transistor includes forming a gate electrode, forming a gate insulating layer on the gate electrode, forming an organic semiconductor layer on the gate insulating layer, forming a solvent selective photosensitive layer on the organic semiconductor layer, forming an organic semiconductor pattern and a solvent selective photosensitive pattern by simultaneously patterning the organic semiconductor layer and the solvent selective photosensitive layer, respectively, and forming a source electrode and a drain electrode on the organic semiconductor pattern and the solvent selective photosensitive pattern, the source electrode and the drain electrode being electrically connected to the organic semiconductor pattern.
Abstract:
A thin film transistor includes a gate electrode, an organic semiconductor overlapping the gate electrode, an insulator between the gate electrode and the organic semiconductor, and a source electrode and a drain electrode electrically connected to the organic semiconductor, respectively. The organic semiconductor is capable of being applied by a solution process, the insulator includes an inorganic insulating layer having a surface facing the organic semiconductor, and the surface includes a coating with a polysiloxane having an acrylic terminal group.
Abstract:
Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.
Abstract:
An insulating composition includes a nanoparticle-polyorganosiloxane composite, a cross-linking agent, and a solvent, an insulator includes the insulating composition, and an electronic device includes the insulator.
Abstract:
A stretchable insulating film may include a first insulating layer having stretchability and a second insulating layer on the first layer and having non-stretchability. The first insulating layer may include an elastomer and the second insulating layer may include a cyclic siloxane polymer framework. An electronic device may include the stretchable insulating film. A method of manufacturing the stretchable insulating film may include forming the first insulating layer and forming the second insulating layer. The forming the first insulating layer may include coating a composition including the elastomer or depositing the elastomer. The forming the second insulating layer may include injecting a cyclic siloxane monomer and an initiator on the first insulating layer into a reactor equipped with a heat source and performing a polymerization reaction by low-temperature vapor deposition.
Abstract:
A stacked structure for a stretchable device includes a stretchable layer including an elastic polymer, and a conductive layer on the stretchable layer and including a metal, wherein the stretchable layer includes a first depth region and a second depth region sequentially disposed in a depth direction from a surface of the stretchable layer that is in contact with the conductive layer and the first depth region includes the metal.
Abstract:
A stretchable device includes a substrate, the substrate including first regions having a first stiffness and a second region between adjacent first regions and having a second stiffness that is lower than the first stiffness, a unit device array including unit devices on separate, respective first regions of the substrate, and an encapsulant covering the unit device array. The unit device array includes pixel electrodes isolated on separate, respective first regions of the substrate, common electrodes isolated on separate, respective first regions and each facing a separate pixel electrode, the stretchable device configured to apply a same voltage to the plurality of common electrodes, and active layers on separate, respective first regions and each between a separate pixel electrode and a separate common electrode.
Abstract:
A storage device is provided. The storage device includes a controller which receives a command from a host for instructing performance of a first computation, a non-volatile memory which stores a plurality of datasets, a buffer memory to which a first dataset among the plurality of datasets stored in the non-volatile memory is provided in response to the command, and an accelerator which performs the first computation corresponding to the command, using the first dataset provided to the buffer memory. The accelerator includes a memory access module which receives a first input query for instructing the first computation and the first dataset from the buffer memory, and a first computing module which is connected to the memory access module and determines first final candidate data corresponding to the first input query, using the first dataset.