公开(公告)号：US10211196B2

公开(公告)日：2019-02-19

申请号：US15234532

申请日：2016-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Hyok Ko ,  Min-Chang Ko ,  Han-Gu Kim ,  Jong-Kyu Song ,  Jin Heo

IPC: H01L27/02 ,  H01L29/74 ,  H01L29/78 ,  H01L29/66

Abstract: An electrostatic discharge (ESD) protection device includes an N-type laterally diffused metal oxide semiconductor (LDMOS) transistor including a source electrode, a gate electrode, and a well bias electrode that are connected to a first pad receiving a first voltage, and a drain electrode connected to a middle node. The ESD protection device further includes a silicon controlled rectifier (SCR) connected between the middle node and a second pad receiving a second voltage higher than the first voltage.

公开(公告)号：US09799641B2

公开(公告)日：2017-10-24

申请号：US14809299

申请日：2015-07-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Hyok Ko ,  Han-Gu Kim ,  Jong-Kyu Song ,  Jin Heo

IPC: H01L27/02

CPC classification number: H01L27/0262 ,  H01L27/027

Abstract: In an ESD protection device, a first well of a first conductivity type and a second well of a second conductivity type are formed in a substrate to contact each other. A first impurity region of the first conductivity type and a second impurity region of the second conductivity type are formed in the first well, and are electrically connected to a first electrode pad. The second impurity region is spaced apart from the first impurity region in a direction of the second well. A third impurity region is formed in the second well, has the second conductivity type, and is electrically connected to a second electrode pad. A fourth impurity region is formed in the second well, is located in a direction of the first well from the third impurity region to contact the third impurity region, has the first conductivity type, and is electrically floated.

公开(公告)号：US10134723B2

公开(公告)日：2018-11-20

申请号：US15708452

申请日：2017-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Hyok Ko ,  Han-Gu Kim ,  Jong-Kyu Song ,  Jin Heo

IPC: H01L27/02

Abstract: In an ESD protection device, a first well of a first conductivity type and a second well of a second conductivity type are formed in a substrate to contact each other. A first impurity region of the first conductivity type and a second impurity region of the second conductivity type are formed in the first well, and are electrically connected to a first electrode pad. The second impurity region is spaced apart from the first impurity region in a direction of the second well. A third impurity region is formed in the second well, has the second conductivity type, and is electrically connected to a second electrode pad. A fourth impurity region is formed in the second well, is located in a direction of the first well from the third impurity region to contact the third impurity region, has the first conductivity type, and is electrically floated.

公开(公告)号：US20180012883A1

公开(公告)日：2018-01-11

申请号：US15708452

申请日：2017-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Hyok Ko ,  Han-Gu Kim ,  Jong-Kyu Song ,  Jin Heo

IPC: H01L27/02

CPC classification number: H01L27/0262 ,  H01L27/027

Abstract: In an ESD protection device, a first well of a first conductivity type and a second well of a second conductivity type are formed in a substrate to contact each other. A first impurity region of the first conductivity type and a second impurity region of the second conductivity type are formed in the first well, and are electrically connected to a first electrode pad. The second impurity region is spaced apart from the first impurity region in a direction of the second well. A third impurity region is formed in the second well, has the second conductivity type, and is electrically connected to a second electrode pad. A fourth impurity region is formed in the second well, is located in a direction of the first well from the third impurity region to contact the third impurity region, has the first conductivity type, and is electrically floated.