公开(公告)号：US20170264334A1

公开(公告)日：2017-09-14

申请号：US15453577

申请日：2017-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Woo LEE ,  Jae Hoon LEE ,  Jong Mi Lee ,  Thomas Byung Hak CHO

IPC: H04B1/401 ,  H04B1/00

CPC classification number: H04B1/401 ,  H04B1/0067 ,  H04W88/06

Abstract: Provided are a semiconductor device and an operating method thereof. The semiconductor device includes a mode controller configured to output a first control signal in a first communication mode, and output a second control signal in a second communication mode which is different from the first communication mode; and a configurable circuit configured to generate a first output signal to be transmitted to a first type analog-to-digital converter (ADC) in the first communication mode, and generate a second output signal using a second type ADC in the second communication mode, wherein the configurable circuit comprises a switching circuit configured to change a circuit configuration to a first circuit configuration for generating a first output signal in the first communication mode or to a second circuit configuration for generating a second output signal in the second communication mode, depending on the first control signal or the second control signal received from the mode controller.

公开(公告)号：US20190079553A1

公开(公告)日：2019-03-14

申请号：US15914095

申请日：2018-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Jin JANG ,  Seung Hyun OH ,  Jong Woo LEE

IPC: G05F3/16 ,  H03K17/567

CPC classification number: G05F3/16 ,  H03K17/567

Abstract: A bandgap reference voltage generation system includes a common mode voltage generator, a bandgap reference voltage generation circuit, and a switch controller. The bandgap reference voltage generation circuit includes a plurality of transistors having source terminals respectively connected to drain terminals of a plurality of PMOS transistors. The switch controller provides a ground voltage to the bandgap reference voltage generation circuit in a first mode and a common mode voltage to the bandgap reference voltage generation circuit in a second mode. The bandgap reference voltage generation circuit causes the plurality of the transistors to operate in a linear region by providing the common mode voltage to gate electrodes of the plurality of the transistors in the first mode and a saturation region by providing the ground voltage to the gate electrodes of the plurality of the transistors in the second mode.