公开(公告)号：US20250125197A1

公开(公告)日：2025-04-17

申请号：US18884732

申请日：2024-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyun Kweon ,  Wooju Kim ,  Junho Yoon ,  Dayoung Cho ,  Jinwook Hong

IPC: H01L21/78 ,  B23K26/38 ,  B23K101/40 ,  H01L21/02 ,  H01L21/304 ,  H01L21/683

Abstract: A semiconductor chip includes a base substrate including a first surface, a second surface opposite to the first surface, and a sidewall extending between the first surface and the second surface, and a device layer on the first surface of the base substrate, wherein the base substrate includes a stress relief region within a first depth from the second surface and a second depth from the sidewall, and at least a portion of the sidewall of the base substrate is recessed inward from the sidewall of the device layer.