公开(公告)号：US20250079302A1

公开(公告)日：2025-03-06

申请号：US18444990

申请日：2024-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoungjae BAE ,  Jin-Wook YANG ,  Seung Pil KO ,  Yongjae KIM ,  Junho PARK ,  Kilho LEE

IPC: H01L23/528 ,  H01L23/48 ,  H01L29/417 ,  H10B61/00

Abstract: A semiconductor device includes a substrate having a top surface and a bottom surface opposite to each other, a gate structure on the top surface of the substrate, a plurality of source/drain patterns on the top surface of the substrate and on opposite sides of the gate structure, a backside conductive line on the bottom surface of the substrate and electrically connected to at least one of the gate structure or a first source/drain pattern of the source/drain patterns, and a magnetic tunnel junction pattern electrically connected to a second source/drain pattern of the source/drain patterns.