公开(公告)号：US08834968B2

公开(公告)日：2014-09-16

申请号：US13708914

申请日：2012-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung-Jae Bae ,  Sung-Lae Cho ,  Jin-Il Lee ,  Hye-Young Park ,  Do-Hyung Kim

IPC: C23C16/30 ,  H01L21/71 ,  H01L45/00 ,  C01B19/04 ,  G11C13/00 ,  C23C16/455 ,  H01L27/24

CPC classification number: C01B19/04 ,  C23C16/305 ,  C23C16/45531 ,  C23C16/45553 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  H01L45/1691

Abstract: In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.